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How to bring efficient graphene transistors closer

The scientists at the University of Manchester placed two layers of graphene between layers of boron nitride. Because the graphene layers were completely surrounded by the boron nitride, the research team was able to investigate how the material behaves if it is not influenced by external conditions.

Researchers have created a multi-layer graphene prototype in which the electrical properties of the material are much more adaptable than in previous projects. This brings the application of graphene transistors closer.

According to team leader Leonid Ponomarenko, the electrical properties of graphene can be exploited in a way that was previously not within reach. "So far, people have never seen graphene as an insulator unless the material was intentionally damaged. We turned high-quality graphene into an insulator for the first time."

According to him, the new structure is the best graphene platform yet for use in future electronics and effectively overcomes instability and quality issues. Within a few months, transistors of graphene encapsulated by boron nitride could appear. Those transistors must then have a better capacity than previous graphene circuits.

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