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What are the outstanding characteristics of graphene hexagonal boron nitride?

Graphene and hexagonal boron nitride (h-BN) are similar in structure but different in electrical properties. Because graphene hexagonal boron nitride planar heterojunction has important potential in basic research and device exploration, it has attracted much attention from academia. 

The preparation of graphene hexagonal boron nitride planar heterojunctions is usually carried out by sequentially depositing graphene and hexagonal boron nitride, or in the reverse order, due to the difficulty of subsequent nucleation control and the reaction of the reaction gas during the growth process, Thus the current literature reports that the quality of the graphene hexagonal boron nitride planar heterojunction is not satisfactory. 

Based on the research basis of high-quality hexagonal boron nitride and graphene films grown on Cu-Ni alloy substrates, the lattice-enriched zeolite was grown by first depositing hexagonal boron nitride single crystal, high-quality graphene hexagonal boron nitride planar heterojunctions were successfully prepared. The deposition time of graphene on copper-nickel alloy is very fast, and the shorter graphene deposition time reduces the destruction of hexagonal boron nitride film during the growth of graphene film.

At the same time, due to the excellent catalytic ability of copper-nickel alloy, the crystallization of graphene is eliminated while increasing the crystallization quality of boron nitride single crystal, so that the graphene crystal domain is only at the vertex angle of the triangular, h-BN single crystal domain the nuclei are grown along the h-BN orientation. 

The United States Rice University use in high-quality graphene hexagonal boron nitride plane heterojunction on the basis of graphene as a contact electrode, hexagonal boron nitride as insulation Substrate, the WSe2 / MoS2 two-dimensional photodetector was fabricated, and the quality and electrical properties of the graphene hexagonal boron nitride planar heterojunction were verified. Based on the heterogeneous junction material platform, the basic research and two-dimensional logic integrated circuit exploration provide the foundation.

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